P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7

RS kodas: 822-2611Gamintojas: DiodesZetexGamintojo kodas: DMP2008UFG-7
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

PowerDI3333-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Plotis

3.35mm

Minimali darbinė temperatūra

-55 °C

Aukštis

0.85mm

Produkto aprašymas

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,659

Each (In a Pack of 25) (be PVM)

€ 0,797

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,659

Each (In a Pack of 25) (be PVM)

€ 0,797

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 375€ 0,659€ 16,48
400 - 975€ 0,377€ 9,42
1000+€ 0,291€ 7,27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

PowerDI3333-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Plotis

3.35mm

Minimali darbinė temperatūra

-55 °C

Aukštis

0.85mm

Produkto aprašymas

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more