P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1022UFDE-7

RS kodas: 770-5143Gamintojas: DiodesZetexGamintojo kodas: DMP1022UFDE-7
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

9.1 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2.03 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

28.4 nC @ 5 V

Plotis

2.05mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.58mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Patikrinkite dar kartą.

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€ 0,12

Each (In a Pack of 25) (be PVM)

€ 0,145

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1022UFDE-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,12

Each (In a Pack of 25) (be PVM)

€ 0,145

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1022UFDE-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

9.1 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2.03 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

28.4 nC @ 5 V

Plotis

2.05mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.58mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more