N-Channel MOSFET, 150 A, 40 V, 3-Pin TO-220AB Diodes Inc DMNH4005SCT

RS kodas: 146-4658Gamintojas: DiodesZetexGamintojo kodas: DMNH4005SCT
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

TO-220AB

Serija

DMN

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+175 °C

Plotis

9.01mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

48 nC @ 10 V

Ilgis

10.66mm

Forward Diode Voltage

1.2V

Aukštis

4.82mm

Minimali darbinė temperatūra

-55 °C

Automotive Standard

AEC-Q101

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 2,205

Each (In a Tube of 50) (be PVM)

€ 2,668

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 150 A, 40 V, 3-Pin TO-220AB Diodes Inc DMNH4005SCT
sticker-462

€ 2,205

Each (In a Tube of 50) (be PVM)

€ 2,668

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 150 A, 40 V, 3-Pin TO-220AB Diodes Inc DMNH4005SCT
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 2,205€ 110,25
100+€ 2,048€ 102,38

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

TO-220AB

Serija

DMN

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+175 °C

Plotis

9.01mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

48 nC @ 10 V

Ilgis

10.66mm

Forward Diode Voltage

1.2V

Aukštis

4.82mm

Minimali darbinė temperatūra

-55 °C

Automotive Standard

AEC-Q101

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more