N-Channel MOSFET, 6 A, 900 V, 3-Pin TO-220AB Diodes Inc DMN90H2D2HCTI

RS kodas: 133-3383Gamintojas: DiodesZetexGamintojo kodas: DMN90H2D2HCTI
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Plotis

16.27mm

Number of Elements per Chip

1

Ilgis

10.46mm

Typical Gate Charge @ Vgs

20.3 nC @ 10 V

Aukštis

4.9mm

Serija

DMN90H2D2HCTI

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 1,942

Each (In a Pack of 5) (be PVM)

€ 2,35

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 6 A, 900 V, 3-Pin TO-220AB Diodes Inc DMN90H2D2HCTI
Pasirinkite pakuotės tipą
sticker-462

€ 1,942

Each (In a Pack of 5) (be PVM)

€ 2,35

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 6 A, 900 V, 3-Pin TO-220AB Diodes Inc DMN90H2D2HCTI
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Plotis

16.27mm

Number of Elements per Chip

1

Ilgis

10.46mm

Typical Gate Charge @ Vgs

20.3 nC @ 10 V

Aukštis

4.9mm

Serija

DMN90H2D2HCTI

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more