Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7

RS kodas: 822-2602Gamintojas: DiodesZetexGamintojo kodas: DMN65D8LDW-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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€ 0,05

Each (In a Pack of 100) (be PVM)

€ 0,061

Each (In a Pack of 100) (su PVM)

Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,05

Each (In a Pack of 100) (be PVM)

€ 0,061

Each (In a Pack of 100) (su PVM)

Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more