N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-23 Diodes Inc DMN65D8L-7

RS kodas: 823-2952PGamintojas: DiodesZetexGamintojo kodas: DMN65D8L-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

540 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,021

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,025

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-23 Diodes Inc DMN65D8L-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,021

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,025

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-23 Diodes Inc DMN65D8L-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

540 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more