N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

RS kodas: 182-6901Gamintojas: DiodesZetexGamintojo kodas: DMN62D1LFB-7B
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

407 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

X1-DFN1006

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.07mm

Typical Gate Charge @ Vgs

0.45 nC @ 4.5V

Plotis

0.67mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

0.48mm

Kilmės šalis

China

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€ 0,065

Each (On a Reel of 10000) (be PVM)

€ 0,079

Each (On a Reel of 10000) (su PVM)

N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B
sticker-462

€ 0,065

Each (On a Reel of 10000) (be PVM)

€ 0,079

Each (On a Reel of 10000) (su PVM)

N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

407 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

X1-DFN1006

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.07mm

Typical Gate Charge @ Vgs

0.45 nC @ 4.5V

Plotis

0.67mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Aukštis

0.48mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more