Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.39mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 88,73
€ 0,444 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 107,36
€ 0,537 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
€ 88,73
€ 0,444 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 107,36
€ 0,537 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 200 - 480 | € 0,444 | € 8,87 |
| 500 - 1980 | € 0,392 | € 7,85 |
| 2000+ | € 0,339 | € 6,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.39mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products