N-Channel MOSFET, 9.9 A, 30 V, 6-Pin U-DFN2020 Diodes Inc DMN3025LFDF-7

RS kodas: 133-3354Gamintojas: DiodesZetexGamintojo kodas: DMN3025LFDF-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

13.2 nC @ 15 V

Aukštis

0.58mm

Serija

DMN3025LFDF

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,036

Each (In a Pack of 50) (be PVM)

€ 0,043

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 9.9 A, 30 V, 6-Pin U-DFN2020 Diodes Inc DMN3025LFDF-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,036

Each (In a Pack of 50) (be PVM)

€ 0,043

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 9.9 A, 30 V, 6-Pin U-DFN2020 Diodes Inc DMN3025LFDF-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

13.2 nC @ 15 V

Aukštis

0.58mm

Serija

DMN3025LFDF

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Produkto aprašymas

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more