N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7

RS kodas: 182-6892Gamintojas: DiodesZetexGamintojo kodas: DMN2450UFD-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

X1-DFN1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Aukštis

0.48mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

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€ 0,039

Each (On a Reel of 3000) (be PVM)

€ 0,047

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7
sticker-462

€ 0,039

Each (On a Reel of 3000) (be PVM)

€ 0,047

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

X1-DFN1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Aukštis

0.48mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more