N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2450UFB4-7R
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
X2-DFN1006
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Plotis
0.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Aukštis
0.35mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,039
Each (On a Reel of 3000) (be PVM)
€ 0,047
Each (On a Reel of 3000) (su PVM)
3000
€ 0,039
Each (On a Reel of 3000) (be PVM)
€ 0,047
Each (On a Reel of 3000) (su PVM)
3000
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 3000 - 6000 | € 0,039 | € 116,55 |
| 9000 - 12000 | € 0,038 | € 113,40 |
| 15000+ | € 0,038 | € 113,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
X2-DFN1006
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Plotis
0.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Aukštis
0.35mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products