Diodes Inc Dual N-Channel MOSFET, 1.33 A, 20 V, 6-Pin SOT-563 DMN2400UV-7

RS kodas: 169-0688Gamintojas: DiodesZetexGamintojo kodas: DMN2400UV-7
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.33 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

530 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Plotis

1.25mm

Ilgis

1.7mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

0.6mm

Kilmės šalis

China

Produkto aprašymas

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Sandėlio informacija laikinai nepasiekiama.

€ 242,25

€ 0,081 Each (On a Reel of 3000) (be PVM)

€ 293,12

€ 0,098 Each (On a Reel of 3000) (su PVM)

Diodes Inc Dual N-Channel MOSFET, 1.33 A, 20 V, 6-Pin SOT-563 DMN2400UV-7
sticker-462

€ 242,25

€ 0,081 Each (On a Reel of 3000) (be PVM)

€ 293,12

€ 0,098 Each (On a Reel of 3000) (su PVM)

Diodes Inc Dual N-Channel MOSFET, 1.33 A, 20 V, 6-Pin SOT-563 DMN2400UV-7
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

1.33 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

530 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Plotis

1.25mm

Ilgis

1.7mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

0.6mm

Kilmės šalis

China

Produkto aprašymas

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more