N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7

RS kodas: 133-3376Gamintojas: DiodesZetexGamintojo kodas: DMN2056U-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Serija

DMN2056U

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

940 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,362

Each (In a Pack of 50) (be PVM)

€ 0,438

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,362

Each (In a Pack of 50) (be PVM)

€ 0,438

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
50 - 450€ 0,362€ 18,11
500 - 950€ 0,163€ 8,14
1000 - 1950€ 0,126€ 6,30
2000 - 2950€ 0,121€ 6,04
3000+€ 0,108€ 5,41

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Serija

DMN2056U

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

940 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more