N-Channel MOSFET, 14.2 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2011UFDF-7

RS kodas: 133-3344Gamintojas: DiodesZetexGamintojo kodas: DMN2011UFDF-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

56 nC @ 10 V

Ilgis

2.05mm

Serija

DMN2011UFDF

Minimali darbinė temperatūra

-55 °C

Aukštis

0.58mm

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,435

Each (In a Pack of 20) (be PVM)

€ 0,526

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 14.2 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2011UFDF-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,435

Each (In a Pack of 20) (be PVM)

€ 0,526

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 14.2 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2011UFDF-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

56 nC @ 10 V

Ilgis

2.05mm

Serija

DMN2011UFDF

Minimali darbinė temperatūra

-55 °C

Aukštis

0.58mm

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more