N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7

RS kodas: 708-2425PGamintojas: DiodesZetexGamintojo kodas: DMN2004K-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-65 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Patikrinkite dar kartą.

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€ 0,334

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,404

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,334

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,404

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
25 - 125€ 0,334€ 8,35
150+€ 0,139€ 3,46

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-65 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more