N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7

RS kodas: 146-0954Gamintojas: DiodesZetexGamintojo kodas: DMN10H099SFG-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

PowerDI3333-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.35mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Aukštis

0.8mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.77V

Kilmės šalis

China

Produkto aprašymas

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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€ 0,328

Each (On a Reel of 2000) (be PVM)

€ 0,397

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7
sticker-462

€ 0,328

Each (On a Reel of 2000) (be PVM)

€ 0,397

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

PowerDI3333-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.35mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Aukštis

0.8mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

0.77V

Kilmės šalis

China

Produkto aprašymas

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more