N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

RS kodas: 182-6883Gamintojas: DiodesZetexGamintojo kodas: DMN1004UFDF-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

12 (State) A, 15 (Steady) A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Plotis

2.05mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.58mm

Kilmės šalis

China

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€ 0,14

Each (On a Reel of 3000) (be PVM)

€ 0,169

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7
sticker-462

€ 0,14

Each (On a Reel of 3000) (be PVM)

€ 0,169

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

12 (State) A, 15 (Steady) A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Plotis

2.05mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.58mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more