N-Channel MOSFET, 7 A, 700 V, 3+Tab-Pin IPAK Diodes Inc DMJ70H900HJ3
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Pakuotės tipas
TO-251
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
2.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Aukštis
7.17mm
Serija
DMJ70H900HJ3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 1,522
Each (In a Pack of 5) (be PVM)
€ 1,842
Each (In a Pack of 5) (su PVM)
5
€ 1,522
Each (In a Pack of 5) (be PVM)
€ 1,842
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 1,522 | € 7,61 |
| 25 - 95 | € 1,208 | € 6,04 |
| 100 - 495 | € 1,008 | € 5,04 |
| 500 - 995 | € 0,865 | € 4,33 |
| 1000+ | € 0,756 | € 3,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Pakuotės tipas
TO-251
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
2.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Aukštis
7.17mm
Serija
DMJ70H900HJ3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products