P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 Diodes Inc DMG2307L-7

RS kodas: 822-2539Gamintojas: DiodesZetexGamintojo kodas: DMG2307L-7
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

134 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

4 nC @ 10 V

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,21

Each (In a Pack of 100) (be PVM)

€ 0,254

Each (In a Pack of 100) (su PVM)

P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 Diodes Inc DMG2307L-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,21

Each (In a Pack of 100) (be PVM)

€ 0,254

Each (In a Pack of 100) (su PVM)

P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 Diodes Inc DMG2307L-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
100 - 500€ 0,21€ 21,00
600 - 1400€ 0,175€ 17,54
1500+€ 0,14€ 13,96

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

134 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

4 nC @ 10 V

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more