Dual P-Channel MOSFET, 130 mA, 50 V, 6-Pin SOT-363 Diodes Inc BSS84DW-7-F

RS kodas: 708-2484Gamintojas: DiodesZetexGamintojo kodas: BSS84DW-7-F
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Plotis

1.35mm

Number of Elements per Chip

2

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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€ 0,132

Each (In a Pack of 25) (be PVM)

€ 0,16

Each (In a Pack of 25) (su PVM)

Dual P-Channel MOSFET, 130 mA, 50 V, 6-Pin SOT-363 Diodes Inc BSS84DW-7-F
Pasirinkite pakuotės tipą
sticker-462

€ 0,132

Each (In a Pack of 25) (be PVM)

€ 0,16

Each (In a Pack of 25) (su PVM)

Dual P-Channel MOSFET, 130 mA, 50 V, 6-Pin SOT-363 Diodes Inc BSS84DW-7-F
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Plotis

1.35mm

Number of Elements per Chip

2

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more