N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F

RS kodas: 738-4926Gamintojas: DiodesZetexGamintojo kodas: BSS123-7-F
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,29

Each (In a Pack of 100) (be PVM)

€ 0,351

Each (In a Pack of 100) (su PVM)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F
Pasirinkite pakuotės tipą
sticker-462

€ 0,29

Each (In a Pack of 100) (be PVM)

€ 0,351

Each (In a Pack of 100) (su PVM)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
100 - 400€ 0,29€ 28,98
500 - 900€ 0,178€ 17,85
1000 - 2400€ 0,173€ 17,32
2500 - 4900€ 0,163€ 16,28
5000+€ 0,153€ 15,33

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more