Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexTvirtinimo tipas
Surface Mount
Pakuotės tipas
DO-214AC (SMA)
Maximum Continuous Forward Current
1A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Kaiščių skaičius
2
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
30A
Kilmės šalis
China
Produkto aprašymas
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 166,25
€ 0,033 Each (On a Reel of 5000) (be PVM)
€ 201,16
€ 0,04 Each (On a Reel of 5000) (su PVM)
5000

€ 166,25
€ 0,033 Each (On a Reel of 5000) (be PVM)
€ 201,16
€ 0,04 Each (On a Reel of 5000) (su PVM)
5000

Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexTvirtinimo tipas
Surface Mount
Pakuotės tipas
DO-214AC (SMA)
Maximum Continuous Forward Current
1A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Kaiščių skaičius
2
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
30A
Kilmės šalis
China
Produkto aprašymas
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.