HMC580ST89E Analog Devices, RF Amplifier MMIC, 22 dB 1 GHz, 3-Pin SOT-89
Techniniai dokumentai
Specifikacijos
Markė
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
22 dB
Typical Output Power
22dBm
Typical Noise Figure
2.8dB
Number of Channels per Chip
1
Maximum Operating Frequency
1 GHz
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-89
Kaiščių skaičius
3
Matmenys
4.6 x 2.59 x 1.6mm
Aukštis
1.6mm
Ilgis
4.6mm
Serija
Hittite
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+85 °C
Maximum Operating Supply Voltage
5 V
Plotis
2.59mm
Produkto aprašymas
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
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P.O.A.
2
Techniniai dokumentai
Specifikacijos
Markė
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
22 dB
Typical Output Power
22dBm
Typical Noise Figure
2.8dB
Number of Channels per Chip
1
Maximum Operating Frequency
1 GHz
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-89
Kaiščių skaičius
3
Matmenys
4.6 x 2.59 x 1.6mm
Aukštis
1.6mm
Ilgis
4.6mm
Serija
Hittite
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+85 °C
Maximum Operating Supply Voltage
5 V
Plotis
2.59mm
Produkto aprašymas
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.