HMC311LP3E Analog Devices, RF Amplifier MMIC, 14.5 dB 6 GHz, 16-Pin SMT
Techniniai dokumentai
Specifikacijos
Markė
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
6 GHz
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SMT
Kaiščių skaičius
16
Matmenys
3.1 x 3.1 x 1mm
Aukštis
1mm
Ilgis
3.1mm
Plotis
3.1mm
Serija
Hittite
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+85 °C
Maximum Operating Supply Voltage
5 V
Kilmės šalis
Malaysia
Produkto aprašymas
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 8,82
Each (On a Reel of 50) (be PVM)
€ 10,672
Each (On a Reel of 50) (su PVM)
50
€ 8,82
Each (On a Reel of 50) (be PVM)
€ 10,672
Each (On a Reel of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 50 - 50 | € 8,82 | € 441,00 |
| 100+ | € 8,40 | € 420,00 |
Techniniai dokumentai
Specifikacijos
Markė
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
6 GHz
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SMT
Kaiščių skaičius
16
Matmenys
3.1 x 3.1 x 1mm
Aukštis
1mm
Ilgis
3.1mm
Plotis
3.1mm
Serija
Hittite
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+85 °C
Maximum Operating Supply Voltage
5 V
Kilmės šalis
Malaysia
Produkto aprašymas
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.