Vishay P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 SI2325DS-T1-E3

RS kodas: 710-3263Gamintojas: VishayGamintojo kodas: SI2325DS-T1-E3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

530 mA

Maximum Drain Source Voltage

150 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 5,25

€ 1,05 Each (In a Pack of 5) (be PVM)

€ 6,35

€ 1,27 Each (In a Pack of 5) (su PVM)

Vishay P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 SI2325DS-T1-E3
Pasirinkite pakuotės tipą
sticker-462

€ 5,25

€ 1,05 Each (In a Pack of 5) (be PVM)

€ 6,35

€ 1,27 Each (In a Pack of 5) (su PVM)

Vishay P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 SI2325DS-T1-E3

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

530 mA

Maximum Drain Source Voltage

150 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.04mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more