Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
40 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Ilgis
5.99mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Plotis
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Aukštis
1.07mm
Minimali darbinė temperatūra
-55 °C
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€ 1 152,00
€ 0,384 Each (On a Reel of 3000) (be PVM)
€ 1 393,92
€ 0,465 Each (On a Reel of 3000) (su PVM)
3000
€ 1 152,00
€ 0,384 Each (On a Reel of 3000) (be PVM)
€ 1 393,92
€ 0,465 Each (On a Reel of 3000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
3000
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
40 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Ilgis
5.99mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Plotis
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Aukštis
1.07mm
Minimali darbinė temperatūra
-55 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products