STMicroelectronics STGD19N40LZ IGBT, 25 A 425 V, 3-Pin DPAK (TO-252), Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
6.6 x 6.2 x 2.4mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 18,00
€ 1,80 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 21,78
€ 2,178 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
10
€ 18,00
€ 1,80 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 21,78
€ 2,178 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
10
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 10 - 95 | € 1,80 | € 9,00 |
| 100 - 495 | € 1,40 | € 7,00 |
| 500+ | € 1,30 | € 6,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
6.6 x 6.2 x 2.4mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products