onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G

RS kodas: 780-4723Gamintojas: onsemiGamintojo kodas: NTMS4177PR2G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Plotis

4mm

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 3,34

€ 0,334 Each (In a Pack of 10) (be PVM)

€ 4,04

€ 0,404 Each (In a Pack of 10) (su PVM)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Pasirinkite pakuotės tipą
sticker-462

€ 3,34

€ 0,334 Each (In a Pack of 10) (be PVM)

€ 4,04

€ 0,404 Each (In a Pack of 10) (su PVM)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Plotis

4mm

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more