N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK onsemi FQB33N10LTM

RS kodas: 671-0885Gamintojas: onsemiGamintojo kodas: FQB33N10LTM
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

30 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Plotis

9.65mm

Transistor Material

Si

Aukštis

4.83mm

Serija

QFET

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 8,00

€ 1,60 Each (In a Pack of 5) (be PVM)

€ 9,68

€ 1,936 Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK onsemi FQB33N10LTM
Pasirinkite pakuotės tipą
sticker-462

€ 8,00

€ 1,60 Each (In a Pack of 5) (be PVM)

€ 9,68

€ 1,936 Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK onsemi FQB33N10LTM

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,60€ 8,00
50 - 95€ 1,35€ 6,75
100+€ 1,05€ 5,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

30 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Plotis

9.65mm

Transistor Material

Si

Aukštis

4.83mm

Serija

QFET

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more