Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-23
Serija
PowerTrench
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
2.92mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Plotis
1.4mm
Aukštis
0.94mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 2,70
€ 0,54 Each (In a Pack of 5) (be PVM)
€ 3,27
€ 0,653 Each (In a Pack of 5) (su PVM)
Standartas
5

€ 2,70
€ 0,54 Each (In a Pack of 5) (be PVM)
€ 3,27
€ 0,653 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 45 | € 0,54 | € 2,70 |
50 - 145 | € 0,513 | € 2,56 |
150 - 745 | € 0,432 | € 2,16 |
750 - 1495 | € 0,405 | € 2,02 |
1500+ | € 0,38 | € 1,90 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-23
Serija
PowerTrench
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
2.92mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Plotis
1.4mm
Aukštis
0.94mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.