IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-220
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.66mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
32 nC @ 10 V
Plotis
4.83mm
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 23,00
€ 4,60 Each (In a Pack of 5) (be PVM)
€ 27,83
€ 5,566 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 23,00
€ 4,60 Each (In a Pack of 5) (be PVM)
€ 27,83
€ 5,566 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 4,60 | € 23,00 |
| 25 - 95 | € 3,50 | € 17,50 |
| 100 - 245 | € 3,30 | € 16,50 |
| 250 - 495 | € 2,85 | € 14,25 |
| 500+ | € 2,65 | € 13,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-220
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.66mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
32 nC @ 10 V
Plotis
4.83mm
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products