Infineon CoolMOS™ C3 N-Channel MOSFET, 4 A, 800 V, 3-Pin TO-220 SPP04N80C3XKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-220
Serija
CoolMOS™ C3
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Ilgis
10.36mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Plotis
4.57mm
Transistor Material
Si
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,60
€ 1,80 Each (In a Pack of 2) (be PVM)
€ 4,36
€ 2,178 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 3,60
€ 1,80 Each (In a Pack of 2) (be PVM)
€ 4,36
€ 2,178 Each (In a Pack of 2) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
2
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-220
Serija
CoolMOS™ C3
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Ilgis
10.36mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Plotis
4.57mm
Transistor Material
Si
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products