Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
100 V
Serija
HEXFET
Pakuotės tipas
I2PAK (TO-262)
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
44 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.67mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.65mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 13,50
€ 1,35 Each (In a Pack of 10) (be PVM)
€ 16,34
€ 1,634 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 13,50
€ 1,35 Each (In a Pack of 10) (be PVM)
€ 16,34
€ 1,634 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 1,35 | € 13,50 |
| 100 - 240 | € 1,30 | € 13,00 |
| 250 - 490 | € 1,25 | € 12,50 |
| 500 - 990 | € 1,20 | € 12,00 |
| 1000+ | € 1,10 | € 11,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
100 V
Serija
HEXFET
Pakuotės tipas
I2PAK (TO-262)
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
44 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.67mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.65mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products