Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSIATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.1mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.56V
Produkto aprašymas
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 8,90
€ 0,89 Each (In a Pack of 10) (be PVM)
€ 10,77
€ 1,077 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 8,90
€ 0,89 Each (In a Pack of 10) (be PVM)
€ 10,77
€ 1,077 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.1mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.56V
Produkto aprašymas
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products