Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM28V020-SG
Techniniai dokumentai
Specifikacijos
Memory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
28
Matmenys
18.11 x 7.62 x 2.37mm
Ilgis
18.11mm
Maximum Operating Supply Voltage
3.6 V
Plotis
7.62mm
Aukštis
2.37mm
Maksimali darbinė temperatūra
+85 °C
Number of Words
32K
Minimali darbinė temperatūra
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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P.O.A.
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P.O.A.
Sandėlio informacija laikinai nepasiekiama.
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Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Memory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
28
Matmenys
18.11 x 7.62 x 2.37mm
Ilgis
18.11mm
Maximum Operating Supply Voltage
3.6 V
Plotis
7.62mm
Aukštis
2.37mm
Maksimali darbinė temperatūra
+85 °C
Number of Words
32K
Minimali darbinė temperatūra
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products