Techniniai dokumentai
Specifikacijos
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Tvirtinimo tipas
Through Hole
Markė
WinslowKilmės šalis
United Kingdom
Produkto aprašymas
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 8,265
Each (In a Pack of 5) (be PVM)
€ 10,001
Each (In a Pack of 5) (su PVM)
5
€ 8,265
Each (In a Pack of 5) (be PVM)
€ 10,001
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 120 | € 8,265 | € 41,32 |
125 - 370 | € 7,315 | € 36,58 |
375 - 995 | € 6,365 | € 31,82 |
1000 - 1995 | € 5,415 | € 27,08 |
2000+ | € 5,035 | € 25,18 |
Techniniai dokumentai
Specifikacijos
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Tvirtinimo tipas
Through Hole
Markė
WinslowKilmės šalis
United Kingdom
Produkto aprašymas
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.