N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK Vishay IRFR210TRPBF

RS kodas: 173-0711Gamintojas: VishayGamintojo kodas: IRFR210TRPBF
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

2V

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,444

Each (On a Reel of 3000) (be PVM)

€ 0,537

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK Vishay IRFR210TRPBF
sticker-462

€ 0,444

Each (On a Reel of 3000) (be PVM)

€ 0,537

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK Vishay IRFR210TRPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

2V

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more