N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH

RS kodas: 168-7790Gamintojas: ToshibaGamintojo kodas: TPH8R80ANH
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOP Advanced

Serija

TPH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Plotis

5mm

Number of Elements per Chip

1

Aukštis

0.95mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

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€ 0,936

Each (On a Reel of 5000) (be PVM)

€ 1,133

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH

5000

Galima įsigyti kartotiną kiekį 5000
5000€ 4 678,75
10000€ 9 357,50
15000€ 14 036,25
20000€ 18 715,00
25000€ 23 393,75
30000€ 28 072,50
35000€ 32 751,25
40000€ 37 430,00
45000€ 42 108,75
50000€ 46 787,50
55000€ 51 466,25
60000€ 56 145,00
65000€ 60 823,75
70000€ 65 502,50
75000€ 70 181,25
sticker-462

€ 0,936

Each (On a Reel of 5000) (be PVM)

€ 1,133

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH
Sandėlio informacija laikinai nepasiekiama.

5000

Galima įsigyti kartotiną kiekį 5000
5000€ 4 678,75
10000€ 9 357,50
15000€ 14 036,25
20000€ 18 715,00
25000€ 23 393,75
30000€ 28 072,50
35000€ 32 751,25
40000€ 37 430,00
45000€ 42 108,75
50000€ 46 787,50
55000€ 51 466,25
60000€ 56 145,00
65000€ 60 823,75
70000€ 65 502,50
75000€ 70 181,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOP Advanced

Serija

TPH

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Plotis

5mm

Number of Elements per Chip

1

Aukštis

0.95mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more