N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S

RS kodas: 133-2804Gamintojas: ToshibaGamintojo kodas: TK8P60W5,RVQ(S
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

DPAK (TO-252)

Serija

DTMOSIV

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Plotis

6.1mm

Number of Elements per Chip

1

Aukštis

2.3mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

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€ 10,92

€ 1,092 Each (In a Pack of 10) (be PVM)

€ 13,21

€ 1,321 Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S

10

Galima įsigyti kartotiną kiekį 10
10€ 10,92
20€ 21,85
30€ 32,78
40€ 43,70
50€ 54,62
60€ 65,55
70€ 76,48
80€ 87,40
90€ 98,32
100€ 109,25
110€ 120,18
120€ 131,10
130€ 142,02
140€ 152,95
150€ 163,88
sticker-462

€ 10,92

€ 1,092 Each (In a Pack of 10) (be PVM)

€ 13,21

€ 1,321 Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S
Sandėlio informacija laikinai nepasiekiama.

10

Galima įsigyti kartotiną kiekį 10
10€ 10,92
20€ 21,85
30€ 32,78
40€ 43,70
50€ 54,62
60€ 65,55
70€ 76,48
80€ 87,40
90€ 98,32
100€ 109,25
110€ 120,18
120€ 131,10
130€ 142,02
140€ 152,95
150€ 163,88
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

DPAK (TO-252)

Serija

DTMOSIV

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Plotis

6.1mm

Number of Elements per Chip

1

Aukštis

2.3mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more