N-Channel MOSFET, 15 A, 600 V, 3-Pin TO-3PN Toshiba TK20J60U(F)
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-3PN
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
40.5mm
Plotis
4.8mm
Transistor Material
Si
Serija
TK
Minimali darbinė temperatūra
-55 °C
Aukštis
19mm
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 4,56
už 1 vnt. (be PVM)
€ 5,52
už 1 vnt. (su PVM)
1
€ 4,56
už 1 vnt. (be PVM)
€ 5,52
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 4,56 |
| 10 - 19 | € 3,37 |
| 20+ | € 3,23 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-3PN
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
40.5mm
Plotis
4.8mm
Transistor Material
Si
Serija
TK
Minimali darbinė temperatūra
-55 °C
Aukštis
19mm
Kilmės šalis
Japan
Produkto aprašymas
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products