N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 Toshiba TK100E10N1

RS kodas: 168-7770Gamintojas: ToshibaGamintojo kodas: TK100E10N1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Serija

TK

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.45mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Aukštis

15.1mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

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€ 1,948

Each (In a Tube of 50) (be PVM)

€ 2,357

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 Toshiba TK100E10N1

50

Galima įsigyti kartotiną kiekį 50
50€ 97,38
100€ 194,75
150€ 292,12
200€ 389,50
250€ 486,88
300€ 584,25
350€ 681,62
400€ 779,00
450€ 876,38
500€ 973,75
550€ 1 071,12
600€ 1 168,50
650€ 1 265,88
700€ 1 363,25
750€ 1 460,62
sticker-462

€ 1,948

Each (In a Tube of 50) (be PVM)

€ 2,357

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 Toshiba TK100E10N1
Sandėlio informacija laikinai nepasiekiama.

50

Galima įsigyti kartotiną kiekį 50
50€ 97,38
100€ 194,75
150€ 292,12
200€ 389,50
250€ 486,88
300€ 584,25
350€ 681,62
400€ 779,00
450€ 876,38
500€ 973,75
550€ 1 071,12
600€ 1 168,50
650€ 1 265,88
700€ 1 363,25
750€ 1 460,62
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Serija

TK

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.45mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Aukštis

15.1mm

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more