P-Channel MOSFET, 2.5 A, 20 V, 3-Pin PICOSTAR Texas Instruments CSD25481F4
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
PICOSTAR
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
1mm
Typical Gate Charge @ Vgs
0.913 nC @ 4.5 V
Plotis
0.6mm
Transistor Material
Si
Serija
FemtoFET
Minimali darbinė temperatūra
-55 °C
Aukštis
0.35mm
Produkto aprašymas
P-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 0,407
Each (In a Pack of 10) (be PVM)
€ 0,493
Each (In a Pack of 10) (su PVM)
Standartas
10
€ 0,407
Each (In a Pack of 10) (be PVM)
€ 0,493
Each (In a Pack of 10) (su PVM)
Standartas
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 0,407 | € 4,07 |
| 100 - 190 | € 0,271 | € 2,71 |
| 200 - 390 | € 0,25 | € 2,50 |
| 400 - 790 | € 0,231 | € 2,31 |
| 800+ | € 0,159 | € 1,59 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
PICOSTAR
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
1mm
Typical Gate Charge @ Vgs
0.913 nC @ 4.5 V
Plotis
0.6mm
Transistor Material
Si
Serija
FemtoFET
Minimali darbinė temperatūra
-55 °C
Aukštis
0.35mm
Produkto aprašymas
P-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products