Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
272 A
Maximum Drain Source Voltage
100 V
Serija
NexFET
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 0 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
4.83mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 6,27
€ 6,27 už 1 vnt. (be PVM)
€ 7,59
€ 7,59 už 1 vnt. (su PVM)
Standartas
1
€ 6,27
€ 6,27 už 1 vnt. (be PVM)
€ 7,59
€ 7,59 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 6,27 |
| 5 - 9 | € 6,18 |
| 10+ | € 5,98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
272 A
Maximum Drain Source Voltage
100 V
Serija
NexFET
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 0 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
4.83mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products