N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G

RS kodas: 171-3632Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM60NB260CI C0G
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Techniniai dokumentai

Specifikacijos

Markė

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

ITO-220S

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

260 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

32.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

4.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Aukštis

15mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 3,832

Each (On a Reel of 1000) (be PVM)

€ 4,637

Each (On a Reel of 1000) (su PVM)

N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G

1000

Galima įsigyti kartotiną kiekį 1000
1000€ 3 832,50
2000€ 7 665,00
3000€ 11 497,50
4000€ 15 330,00
5000€ 19 162,50
6000€ 22 995,00
7000€ 26 827,50
8000€ 30 660,00
9000€ 34 492,50
10000€ 38 325,00
11000€ 42 157,50
12000€ 45 990,00
13000€ 49 822,50
14000€ 53 655,00
15000€ 57 487,50
sticker-462

€ 3,832

Each (On a Reel of 1000) (be PVM)

€ 4,637

Each (On a Reel of 1000) (su PVM)

N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G
Sandėlio informacija laikinai nepasiekiama.

1000

Galima įsigyti kartotiną kiekį 1000
1000€ 3 832,50
2000€ 7 665,00
3000€ 11 497,50
4000€ 15 330,00
5000€ 19 162,50
6000€ 22 995,00
7000€ 26 827,50
8000€ 30 660,00
9000€ 34 492,50
10000€ 38 325,00
11000€ 42 157,50
12000€ 45 990,00
13000€ 49 822,50
14000€ 53 655,00
15000€ 57 487,50
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

ITO-220S

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

260 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

32.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

4.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Aukštis

15mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more