SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STMicroelectronics STW70N65DM6
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
650 V
Serija
ST
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.036 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 11,305
Each (In a Tube of 30) (be PVM)
€ 13,679
Each (In a Tube of 30) (su PVM)
30
€ 11,305
Each (In a Tube of 30) (be PVM)
€ 13,679
Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
650 V
Serija
ST
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.036 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products