STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150

RS kodas: 687-5251Gamintojas: STMicroelectronicsGamintojo kodas: STW4N150
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Serija

MDmesh

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Plotis

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.75mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

20.15mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 6,74

€ 6,74 už 1 vnt. (be PVM)

€ 8,16

€ 8,16 už 1 vnt. (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150
Pasirinkite pakuotės tipą
sticker-462

€ 6,74

€ 6,74 už 1 vnt. (be PVM)

€ 8,16

€ 8,16 už 1 vnt. (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

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Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 4€ 6,74
5 - 9€ 6,46
10 - 24€ 5,80
25 - 49€ 5,22
50+€ 4,94

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Serija

MDmesh

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Plotis

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.75mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

20.15mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more