STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Serija
DeepGate, STripFET
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
15.75mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 7,70
€ 3,85 Each (In a Pack of 2) (be PVM)
€ 9,32
€ 4,658 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 7,70
€ 3,85 Each (In a Pack of 2) (be PVM)
€ 9,32
€ 4,658 Each (In a Pack of 2) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
2
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 3,85 | € 7,70 |
| 10 - 18 | € 3,70 | € 7,40 |
| 20 - 48 | € 3,65 | € 7,30 |
| 50 - 98 | € 3,55 | € 7,10 |
| 100+ | € 3,45 | € 6,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Serija
DeepGate, STripFET
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
15.75mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products