P-Channel MOSFET, 60 A, 40 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL60P4LLF6
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerFLAT 5 x 6
Serija
STripFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Aukštis
0.95mm
Forward Diode Voltage
1.1V
Kilmės šalis
China
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 1 989,30
€ 0,663 Each (On a Reel of 3000) (be PVM)
€ 2 407,05
€ 0,802 Each (On a Reel of 3000) (su PVM)
3000
€ 1 989,30
€ 0,663 Each (On a Reel of 3000) (be PVM)
€ 2 407,05
€ 0,802 Each (On a Reel of 3000) (su PVM)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerFLAT 5 x 6
Serija
STripFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Aukštis
0.95mm
Forward Diode Voltage
1.1V
Kilmės šalis
China
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products