Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
500 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Transistor Material
Si
Height
16.4mm
Product details
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 116.38
€ 2.328 Each (In a Tube of 50) (Exc. Vat)
€ 140.82
€ 2.817 Each (In a Tube of 50) (inc. VAT)
50

€ 116.38
€ 2.328 Each (In a Tube of 50) (Exc. Vat)
€ 140.82
€ 2.817 Each (In a Tube of 50) (inc. VAT)
50

Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 2.328 | € 116.38 |
100 - 200 | € 1.90 | € 95.00 |
250+ | € 1.71 | € 85.50 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
500 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Transistor Material
Si
Height
16.4mm
Product details