N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STMicroelectronics STD80N4F6
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Serija
DeepGate, STripFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Plotis
6.2mm
Number of Elements per Chip
1
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 2 135,12
€ 0,854 Each (On a Reel of 2500) (be PVM)
€ 2 583,50
€ 1,033 Each (On a Reel of 2500) (su PVM)
2500
€ 2 135,12
€ 0,854 Each (On a Reel of 2500) (be PVM)
€ 2 583,50
€ 1,033 Each (On a Reel of 2500) (su PVM)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Serija
DeepGate, STripFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Plotis
6.2mm
Number of Elements per Chip
1
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products